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1 article(s) from Kaszewski, Jarosław

p-GaAs photovoltaic structures

Piotr Caban,
Rafał Pietruszka,
Jarosław Kaszewski,
Monika Ożga,
Bartłomiej S. Witkowski,
Krzysztof Kopalko,
Piotr Kuźmiuk,
Katarzyna Gwóźdź,
Ewa Płaczek-Popko,
Krystyna Lawniczak-Jablonska and
Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

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Figure 1: Detailed sequence of GaAs surface-processing steps before the application of the ALD process (the p...

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Figure 2: The PV structure used in the experiment.

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Figure 3: AFM (left panels), SEM top views (right panels), and cross-sections (insets) of A-type samples (the...

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Figure 4: AFM (left panels), SEM top views (right panels), and cross-sections (insets) of B-type samples (the...

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Figure 5: (a–h) A2 spectra after 58 (a–d) and 76 min (e–h) of sputtering. (i–p) B1 spectra after 35 (i–l) and...

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Figure 6: (a) PL spectra (RT) of the samples of the A series. (b) PL spectra (RT) of the samples of the B ser...

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Figure 7: Energy band diagram of the fabricated AZO/Al₂O₃/p-GaAs devices.

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Figure 8: (a) EQE of sulfur-passivated samples (A series). (b) EQE of non-passivated samples (B series).

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Figure 9: I–V characteristics of the measured samples of A series (a) and B series (b).

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Full Research Paper

Published 28 Jun 2021

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Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures